发明名称 |
Resonance tunnel diode memory |
摘要 |
A semiconductor memory device including a plurality of bit lines and a plurality of word lines which intersect to form a matrix of cross points. A respective memory cell is disposed at each cross point and corresponds to the respective word line and respective bit line intersecting at the respective cross point. Each memory cell includes a transfer gate having a first current terminal connected to the corresponding bit line and a control terminal connected to the corresponding word line. Each memory cell also includes a pair of serially connected negative differential resistance memory elements having an interconnection node therebetween. The interconnection node is connected to the second current terminal of the transfer gate. A characteristic controlling circuit is coupled to the plurality of bit lines and controls the voltage of each bit line based on whether a respective memory cell corresponding to the respective bit line is selected or not selected, the characteristic controlling circuit including a plurality of negative differential resistance elements respectively corresponding to the plurality of bit lines.
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申请公布号 |
US5390145(A) |
申请公布日期 |
1995.02.14 |
申请号 |
US19930166108 |
申请日期 |
1993.12.14 |
申请人 |
FUJITSU LIMITED |
发明人 |
NAKASHA, YASUHIRO;WATANABE, YUU |
分类号 |
G11C5/14;G11C11/38;(IPC1-7):G11C13/00 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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