| 摘要 |
PURPOSE:To keep a static memory cell free from errors by a method wherein a first and a second switching means connected to word lines correspondent to the gates of thin film transistors are provided between the output terminal of a first or a second inverter and the input terminal of the second or the first inverter. CONSTITUTION:In a static RAM composed of static memory cells MC, switching MOSFETs N5 and N6 connected to word lines W0 to Wm are provided between the drains of a MOSFET P1 and a MOSFET N1 connected in common and the gates of a MOSFET P2 and a MOSFET N2 connected in common and between the drains of the MOSFET P2 and the MOSFET N2 connected in common and the gates of the MOSFET P1 and the MOSFET N1 connected in common. By this setup, data held in memory cells can be prevented from being inverted due to alpha-rays or the like incident on the cells in a non-selective time. |
