| 摘要 |
PURPOSE:To apply a bias to a specific region of an electronic element or the like without contact by projecting an electron beam by use of an electron beam (a source beam) different from a probe beam in an electron beam tester using a scanning type electron microscope. CONSTITUTION:An electron beam 10 projected from a source beam 11 is made into a pulse beam by a deflection device 13 and is projected to electrodes 15 and 16. The ratio of irradiation time of the electron beam for the electrodes 15 and 16 are determined as m:n so that a negative potential difference m:n can be obtained. The electrodes 15 and 16 are connected to an emitter and a base of an NPN transistor respectively. The electron beam 10 projected from a probe beam 12 scans on a sample by a deflection device 14 and secondary electrons 20 are detected by a detector 17 to be drawn on a Braun tube 18. While observing a potential contrast of a collector region 21, the irradiation ratio is controlled and a turn-on potential of the NPN transistor can be detected. |
