发明名称 Magnetron sputtered boron films and Ti/B multilayer structures
摘要 A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.
申请公布号 US5389445(A) 申请公布日期 1995.02.14
申请号 US19930048373 申请日期 1993.04.15
申请人 REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 MAKOWIECKI, DANIEL M.;JANKOWSKI, ALAN F.
分类号 C23C14/06;C23C14/18;C23C14/34;G21K1/06;(IPC1-7):B32B15/04 主分类号 C23C14/06
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