| 摘要 |
A method for measuring the DC current/voltage characteristic of a semiconductor device includes a first step of setting measurement time based on preset measurement time for the initial measurement and based on the result of a fourth step for the second or succeeding measurement, a second step of measuring the electrical characteristic of a to-be-tested object, a third step of comparing the results of the measurements for the to-be-tested object in the preceding and current cycles and determining that the first and second steps should be repeatedly effected when a difference between the compared measurement results is larger than a preset value and that the measurement should be terminated when the difference is smaller than a preset value, and the fourth step of extending the measurement time by a preset period of time to provide newly set measurement time used in said first step when it is determined in the third step that the first and second steps should be repeatedly effected.
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