| 摘要 |
PURPOSE:To increase the product yield of particularly a dynamic type RAM, etc., for which a shared sense system is adopted without increasing the number of redundancy word lines to be installed, i.e., without impairing the cost reduction thereof. CONSTITUTION:Redundancy word lines WR0 to WR3 of the dynamic type RAM, etc., for which the shared sense system is adopted are arranged on the inner side of pairing shared MOSFETs N7 and N8 and N5 and N6, i.e., within a sense amplifier region. These shared MOSFEts are put into an on state even when the redundancy word lines WR0 to WR3 are put into a selected state. Further, information storage capacitors for suppressing an inter-layer film difference are formed in the upper layers of the shared MOSFETs. |
