发明名称 |
High density TEOS-based film for intermetal dielectrics |
摘要 |
A method of forming a device and the device itself that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric is disclosed. The high density is accomplished though the use of higher RF power and higher oxygen flow rate so that the TEOS is more completely oxidized. The higher density intermetal dielectric absorbs water from air slower than a standard intermetal dielectric film. This lower water absorbance reduces the amount of water in the device and reduces hot electron induced device degradation.
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申请公布号 |
US5389581(A) |
申请公布日期 |
1995.02.14 |
申请号 |
US19930067335 |
申请日期 |
1993.05.25 |
申请人 |
INTEL CORPORATION |
发明人 |
FREIBERGER, PHILIP;GIRIDHAR, RAGUPATHY V.;HUFF, BRETT;MOGHADAM, FARHAD K. |
分类号 |
H01L21/316;H01L21/768;(IPC1-7):H01L21/90 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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