The invention relates to a method for forming a high capacitance thin film capacitor comprising forming an amorphous layer of a dielectric material on the surface of a polycrystalline layer of said dielectric material and arranging the resulting double layer between upper and lower electrodes. The invention further comprises dielectric articles such as capacitors formed in accordance with the method of the invention and includes their use in an electronic circuit.
申请公布号
US5390072(A)
申请公布日期
1995.02.14
申请号
US19920945891
申请日期
1992.09.17
申请人
RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK
发明人
ANDERSON, WAYNE A.;HAMILTON, ROBERT S.;JIA, QUANXI;SHI, ZHIQING