| 摘要 |
PURPOSE:To manufacture a thin-film integrated circuit part at a low cost and reduce its chip size, by forming on a thin-film integrated circuit through a thin-film process a thin-film layered body via an interlayer film made of a glass layer having SiO2 as its main component. CONSTITUTION:On a substrate 11 whereon a thin-film integrated circuit chip 12 is formed, via a PSG film 14 formed by an atmospheric CVD method, a thin-film layered type capacitor 17 wherein a dielectric material layer 15 and a conductor material layer 16 are formed alternately by a thin-film process, and a thin-film layered type inductor 18 comprising a magnetic material layer 19 and the conductor layer 16 are formed respectively. Since in this manner the layered section formed on the substrate 11 whereon the thin-film integrated circuit chip 12 is formed is provided wholly by the thin-film process, no burning processing by a high temperature is required unlike thick-film methods. Thereby, any contraction of the layered section which is caused by burning and any wrong effect which is caused by the difference between the thermal expansion coefficients of the layered section and the substrate whereon the thin-film integrated circuit is formed are eliminated. Also, by virtue of the thin-film method, the layered section is made thin, and cheap Al can be used as the conductor material of the layered section instead of expensive pd. |
