Halbleiteranordnung, bei der in einem Chip ein N-Kanal-MOSFET, ein P-Kanal-MOSFET und eine nichtflüchtige Speicherzelle gebildet sind.

摘要

An n-channel MOSFET (102), a p-channel MOSFET (104) and a nonvolatile memory cell (100) are provided for the same semiconductor substrate (1). The nonvolatile memory cell (100) is formed on the semiconductor substrate (1), the n-channel MOSFET (102) is formed in a p-type well region (11) of the semiconductor substrate (1), and the p-channel MOSFET (104) is formed in an n-type well region (12) of the semiconductor substrate (1).