High reverse voltage static induction thyristor

摘要

The static induction thyristor with high reverse voltage has semiconductor channel zone of low impurity concentration, on whose surface is deposited a main electrode with a high impurity concentration zone of preset conductivity. The several alternative designs feature various thin layered main electrodes for the cathode structure (13) on top of the other channel and anode zones (11, 12).The gate zones (14) may be embedded in the surface of the channel zone, with partial or complete embedding, either adjacent to the surface cathode, or at the base of an entrenched cathode.The cathode and gate electrode layers are of relatively smaller thickness or diameter than the channel zone (12). All zones are low in impurities, but the specification for the channel zone is less than 1 x 1016 atoms/cm3