| 摘要 |
A capacitor with a metal-oxide dielectric layer (14, 115, 1542) is formed with an upper electrode layer (15, 107, 1543) that is electrically connected to an underlying circuit element (11, 103, 1525, 1526). The capacitor may be used in forming storage capacitors for DRAM and NVRAM cells. After forming an underlying circuit element (112, 1525, 1526), such as a source/drain region of a transistor (103, 141, 142), a metal-oxide capacitor is formed over the circuit element. An opening (41, 104, 1544) is formed through the capacitor and extends to the circuit element (11, 103, 1525, 1526). An insulating spacer (51, 116, 1545) is formed, and a conductive member (61, 117,1546) is formed that electrically connects the circuit element (11, 103, 1525, 1526) to the upper electrode layer (15, 107, 1543) of the metal-oxide capacitor. Devices including DRAM and NVRAM cells (100, 140) and methods of forming them are disclosed. <IMAGE> |
