发明名称 Reference potential generating circuit utilizing a difference in threshold between a pair of MOS transistors.
摘要 <p>A reference potential generating circuit comprises a first PMOS transistor having its gate and its drain connected in common to a first node and its source connected to Vcc, a second PMOS transistor having its gate and its drain connected in common to a second node and its source connected to Vcc, a resistor connected between the first node and the second node, and a first current source connected between the first node and ground. A third PMOS transistor is connected at its gate to the second node and at its source connected to Vcc, so that a current mirror is constituted of the second and third transistors. A fourth PMOS transistor is connected at its source connected to a drain of the third PMOS transistor. A gate of the fourth PMOS transistor is connected to the first node, and a drain of the fourth PMOS transistor is connected to one end of a second resistor having its other end grounded. A reference potential is generated from the one end of the second resistor. &lt;IMAGE&gt;</p>
申请公布号 EP0637790(A2) 申请公布日期 1995.02.08
申请号 EP19940112058 申请日期 1994.08.02
申请人 NEC CORPORATION 发明人 TSUKADA, SHYUICHI, C/O NEC CORPORATION
分类号 G05F3/24;H03F3/345;(IPC1-7):G05F3/24 主分类号 G05F3/24
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