| 摘要 |
PURPOSE:To enable a chip to be prevented from deteriorating in brightness and enhanced in reliability by a method wherein a light emitting layer is restrained from being exposed out of the periphery of the chip, and the edge of the light, emitting layer is set free from defects when a substrate is divided into the chips. CONSTITUTION:Mask layers (insulating film) 2 are formed on a semiconductor substrate 1 so as to partition its surface into regions A. Through a selective vapor growth method, a light emitting layer composed of layers 3, 4, and 5 whose surface is flat and end face is prescribed by the edge of an opening is formed on the region A thicker than the mask layer 2. In succession, the surface and the end face of the light emitting layer are covered with a protective layer 6 specified in thickness. It is preferable that the protective layer 6 is formed of semiconductor material which is harder to be oxidized than at least a part of the light emitting layer. An electrode is provided to the front side of the protective layer 6 and the rear side of the substrate 1 respectively. The substrate 1 is cut or cleft along a line where the mask layer 2 is provided into chips. |
