| 摘要 |
<p>PURPOSE:To enable a position detecting semiconductor device to be improved in detection accuracy and easily manufactured by a method wherein all electrodes through which position detection signals are taken out are formed on the surface of a semiconductor substrate. CONSTITUTION:An optical position detecting semiconductor device is composed of a rectangular P-type diffusion layer 2 formed on the surface of an N-type semiconductor substrate 1, N-type diffusion layers 3 and 4 which are so formed in parallel with the opposed sides of the diffusion layer 2 as to reach to the scmiconductor substrate 1, electrodes 5 and 6 formed along the diffusion layers 3 and 4 and electrically connected to them respectively, and electrodes 7 and 8 formed in parallel with the other opposed sides of the diffusion layer 2 crossing the electrodes 5 and 6 at right angles.</p> |
