| 摘要 |
<p>PURPOSE:To realize a P-type II-VI compound semiconductor electrode, which has a low built-in voltage and a low contact resistance, and a II-VI compound semiconductor light emitting element, which is operated with the low driving voltage. CONSTITUTION:On a P-type II-VI compound semiconductor layer, metal electrodes 13 and 14 are formed directly through a P-type III-V compound semiconductor layer. As the P-type III-V compound semiconductor layer, at least one layer of InAlP 9, InGaAlP or InGaP 10 and GaAs 11 is used. As the P-type III-V compound semiconductor layers, two or more layers of InAlP, InGaAlP, InGAP and GaAs are used. The discontinuity of the valence band with respect to the P-type II-VI compound semiconductor is continuously reduced in this laminated strcuturre.</p> |
