| 摘要 |
<p>PURPOSE:To realize a charged particle beam lithography method which enables precision pattern generation in light screening pattern generation and also in shifter pattern generation. CONSTITUTION:A control computer 12 reads shifter pattern data from a memory 15 and a stage control circuit 9, a blanking control circuit 6 and a deflector control circuit 7 in accordance with data thereof. As a result, a stage 8 is moved properly, a deflection signal is supplied to a deflector 5 in accordance with data in a stop position of each stage, and electron beam is deflected. A shifter pattern is generated in a pattern generation material 3 by movement of the stage 8 and deflection and blanking of electron beam. In the shifter pattern generation, a height of the pattern generation material is measured. The height is measured by height measurement wherein a mark M is used while a height in the first light screening pattern generation is measured by applying an optical equation by a light source 13 and a height detector 14.</p> |
