Method of making dynamic random access memory

摘要

A DRAM having a dual cell plate structure and a method of making this DRAM are provided. The DRAM is made by forming two field insulation films with a constant interval on a semiconductor substrate and forming word lines uniformly spaced from each other along with the associated bit lines. The specific structure and method for this DRAM reduces the parasitic capacitance between the bit lines and the word lines so that the fabrication of the DRAM may be easily performed.