| 发明名称 |
Light emitting diode |
| 摘要 |
A light emitting diode is disclosed which comprises at least one heterojunction composed of silicon carbide (SIC) and semiconductor materials selected from the group consisting of gallium nitride (GAN), aluminum nitride (AlN), and aluminum gallium nitride (GaxAl1-xN, 0<x<1).
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| 申请公布号 |
US5387804(A) |
申请公布日期 |
1995.02.07 |
| 申请号 |
US19920944794 |
申请日期 |
1992.09.14 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
SUZUKI, AKIRA;FURUKAWA, KATSUKI;SHIGETA, MITSUHIRO;FUJII, YOSHIHISA |
| 分类号 |
H01L29/78;H01L33/00;H01L33/20;H01L33/32;H01L33/34;(IPC1-7):H01L33/00;H01L29/161;H01L29/20;H01L29/22 |
主分类号 |
H01L29/78 |
| 代理机构 |
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