| 摘要 |
PURPOSE:To prevent vertical cracks in a polysilicon Zener diode that are caused by a stress due to the difference in thermal expansion coefficient when a pellet is cooled off after bonding. CONSTITUTION:Polysilicon at the central portion of a cathode region or anode region, of the central portion of a polysilicon zener diode 5 is eliminated. By doing this, vertical cracks of polysilicon zener diode caused by stresses due to the difference in thermal expansion coefficient during the cooling-off of pellet after bonding can be prevented. |
