发明名称 INSULATED GRAIN BOUNDARY TYPE SEMICONDUCTOR CERAMIC COMPOSITION
摘要 PURPOSE:To realize to make a ceramic plate in a thin plate and to improve the mechanical strength by making the crystal grain boundary into the insulating substance with Mn and at least one of Cu, Bi, Pb, B, and Si, and making the maximum particle diameter less than 50mum. CONSTITUTION:The composition is shown as a general formula: (Sr1-x-gammaBax Mgamma) TialphaO3+betaZ (M is Nb, Ta, W, or a rare earth group element, x is at least one of Bio2 and Al2O3). The values of x, gamma alpha, and beta are 0.20<=x<=0.40, 0.001<=gamma<=0.03, 0.990<=alpha<=0.999, and 0.0003<=beta<=0.01 respectively, the crystal grain boundary is insulated by Mn and at least one of Cu, Bi, Pb, B, and Si, and the maximum particle diameter is made less than 50mum. In such a composition, the ceramic plate can be made in a thin plate, and a capacitor with a ceramic plate of a high mechanical strength, and with a large product of the dielectric constant and the dielectric breakdown voltage can be produced.
申请公布号 JPS63301410(A) 申请公布日期 1988.12.08
申请号 JP19870137079 申请日期 1987.05.29
申请人 MURATA MFG CO LTD 发明人 NAITO YASUYUKI;KACHI TOSHIAKI;WADA NOBUYUKI
分类号 H01G4/12;H01B3/12 主分类号 H01G4/12
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