| 摘要 |
PURPOSE:To reduce the area of a memory cell and at the same time improve reliability by laying out first and second word lines so that they nearly cross first and second active regions and they correspond to each on one part of the gate electrodes of first and second driver transistors CONSTITUTION:Two first and second active regions 3 and 4 are formed in parallel to a semiconductor substrate 2 within a memory cell 1 of SRAM. A first driver transistor 7 is formed at the first active region 3 at one side in diagonal direction of the memory cell 1. Then, a second driver transistor 8 is formed at a second active region 4 at the opposite side in diagonal direction. A first word line 17 is formed in a state so that it nearly cross the first and second active regions 3 and 4 or a second word line 18 is formed on one part of a second crate electrode 14 and in a state so that it nearly crosses the first and second active regions 3 and 4. |
