发明名称 |
Superconductor-semiconductor hybrid memory circuits with superconducting three-terminal switching devices |
摘要 |
Superconducting-semiconducting hybrid memories are disclosed. These superconducting-semiconducting hybrid memories utilize semiconductor circuits to store information, and either superconducting or semiconducting or combinations of superconducting and semiconducting circuits, with at least some superconducting circuitry used, to write and read information. The state of memory cells in the hybrid memories is determined by utilizing superconductor current sensing schemes to detect currents in the bit-line, thereby avoiding any bit-line charging delays and other problems associated with purely semiconductor memories. Additional features of the superconducting-semiconducting hybrid memories include wide margins, dense packing of memory cells, low power dissipation and fast access times. Interface curcuitry for converting superconducting signals to signals compatible with semiconductor circuits and for converting semiconductor signals to signals compatible with superconducting circuits is also disclosed.
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申请公布号 |
US5388068(A) |
申请公布日期 |
1995.02.07 |
申请号 |
US19930136728 |
申请日期 |
1993.10.14 |
申请人 |
MICROELECTRONICS & COMPUTER TECHNOLOGY CORP. |
发明人 |
GHOSHAL, UTTAM S.;KROGER, HARRY |
分类号 |
H01L21/8238;H01L27/092;H01L29/78;H01L39/22;H03K17/92;H03K19/195;(IPC1-7):G11C11/44;G11C11/34;G11C11/00;G11C19/08 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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