| 摘要 |
PURPOSE:To provide a quantum fine wire with a rectangular cross-sectional shape for the micronization of its lateral width and the improvement of controllability, by forming a U-shaped groove having on its wall face a crystal plane perpendicular or almost perpendicular to the substrate in organic metal crystal growth using a V-grooved substrate. CONSTITUTION:In a first process a quantum barrier thin film 6 composed of a first compound semiconductor, is formed on the surface of a V-grooved (001) compound semiconductor substrate 1 on the V-groove 9 side; the thin film is formed using an organic metal vapor phase growth method in such a way that the V-groove 9 is sunk. In a second process a U-shaped groove 10 is formed in the quantum barrier thin film 6 in a position corresponding to that of the V-groove 9; the U-shaped groove has on its side wall a crystal plane containing a (110) plane perpendicular to the surface of the substrate 1. In a third process a quantum well thin film (quantum fine wire) 5 composed of a second compound semiconductor, is formed at the bottom of the U-shaped groove 10. In a fourth process a quantum barrier thin film 7, composed of the same compound semiconductor as the first one 6 or a compound semiconductor other than that, is formed; the quantum barrier thin film 7 is formed in such a way that the U-shaped groove 10 having the quantum fine wire 5 formed will be sunk. |
