| 摘要 |
PURPOSE:To provide the manufacturing method for an electron wave interference element for which stub length can be determined sufficiently short in a highly precise manner. CONSTITUTION:In the electron wave interference element arranged on a substrate in such a manner that a stub consisting of a fine wire structure 4 is provided on a quantum fine wire 5, one of the direction of wire of the quantum fine wire and stub direction is vertical to the surface of the substrate, and other part is arranged in parallel with the surface of the substrate. The lithography process, for determination of the length of the stub structure 4 or the length of the fine wire, is unnecessitated by arranging the surface, including the fine wire part or a protruding part, in the direction vertical to the surface of a semiconductor substrate, and the length of stub structure and the length of the fine wire can be determined by the thickness of an epitaxial crystal semiconductor. |
