| 摘要 |
PURPOSE:To neutralize an alkaline component mixed in a rinsing liquid from a resist release solution, and to prevent a wiring material from being corroded, by a method wherein the rinsing liquid consisting of water-soluble lower monohydric alcohol and an organic or inorganic acid or an organic or inorganic acid and water is used. CONSTITUTION:First, a CVD oxide film 2 forms on an Si substrate 1. A TiW layer 3, a CVD-W layer 4 and an Al-Si-Cu layer 5 form in order on the film 2, a P-type photoresist is applied on the layer 5, and exposed, and a mask consisting of the P-type photoresist 6 is made to form. Then, a conductive layer on a region not covered with the mask is removed by etching, and most of the resist 6 is removed by an ashing. At this time, resist residues 7 are left on the surface of the patterned conductive layer or the like, but these residues are removed using a release solution. Then, a semiconductor device is rinsed with a rinsing liquid consisting of isopropylalcohol containing an acetic acid of 0.333mol/liter, and thereafter, washed with water. |
