发明名称 Method of fabrication of PNP structure in a common substrate containing NPN or MOS structures
摘要 A pnp device in a BiCMOS structure (1). PNP transistors (4) are fabricated without the need for additional process steps on the same substrate as npn (2), PMOS (8), and NMOS (6) devices. The process not only requires a minimum number of additional process steps, but results in devices with near optimum device characteristics.
申请公布号 US5387552(A) 申请公布日期 1995.02.07
申请号 US19920944593 申请日期 1992.09.14
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 IRANMANESH, ALI A.
分类号 H01L27/06;H01L21/8249;(IPC1-7):H01L21/265 主分类号 H01L27/06
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