发明名称 |
Field controlled thyristor |
摘要 |
A readily manufacturable field controlled thyristor with a first semiconductor region of n-type conductivity, a second semiconductor region of p-type in contact with said first region, a void penetrating through said first and second semiconductor regions, a fourth semiconductor region of n-type forming a channel adjacent to said void, a fifth semiconductor region, of p-type, in contact with said third region. The device has a large tolerance for deviations in process parameter precision and accuracy, which enables the device to be produced at a low cost.
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申请公布号 |
US5387805(A) |
申请公布日期 |
1995.02.07 |
申请号 |
US19940177686 |
申请日期 |
1994.01.05 |
申请人 |
METZLER, RICHARD A.;RODOV, VLADIMIR |
发明人 |
METZLER, RICHARD A.;RODOV, VLADIMIR |
分类号 |
H01L29/08;H01L29/74;H01L29/745;(IPC1-7):H01L29/74;H01L29/747 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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