| 摘要 |
PCT No. PCT/JP92/01491 Sec. 371 Date Jul. 12, 1993 Sec. 102(e) Date Jul. 12, 1993 PCT Filed Nov. 16, 1992 PCT Pub. No. WO93/10555 PCT Pub. Date May 27, 1993.A polycrystalline silicon thin film having a hydrogen content of not more than 5 atomic %, which can be fabricated on an inexpensive glass substrate (3) such as soda glass or on a glass substrate (3) provided with a metal electrode or transparent electrode. The polycrystalline silicon thin film can be fabricated at such a tempereture by using multiple repetitions of a process comprising the fabrication of an amorphous silicon film, for example, by the CVD method, followed by exposure to a hydrogen plasma for set period of time.
|
