| 摘要 |
PURPOSE:To enable light projection exposing with the resolution higher than the resolution of the conventional phase sheet masks and diagonal incident illumination by providing the entire surface of the optical mask with stripes which are formed of a conductive light shielding material and have a pitch below about the wavelength of exposing light. CONSTITUTION:Line-and-space patterns consisting of space parts 12a which have a shape long in a direction Y and are repeated in a direction X are formed on the mask 7. The parts exclusive of the space parts 12a are coated with the light shieldable conductive films consisting of chromium, etc. The second line-and-space patterns having the space parts of the shape long in the direction X which are repeated in the direction Y are further formed within the respective pattern parts 12a of the line-and-space patterns. The pitch of the second line-and- space patterns is below about the wavelength of the exposing light and the line parts are formed of conductive films. Then, transmitted light is made into linearly polarized light and the formation of the fine patterns is possible without lowering throuput. The easy production of high-speed and highly integrated semiconductor devices is possible. |
