| 摘要 |
PURPOSE:To form a fine pattern at high resolution on a surface of a substrate material and to transfer an arbitrary fine pattern freely to a material surface by arranging an oxide. film formation raw material by anodic oxidation in an outermost layer. CONSTITUTION:An oxide film formation material such as metal titanium or alloy thereof which can form an oxide film by anodic oxidation treatment is arranged on a second layer 2 as an outermost layer 1 of a multilayer structure of one or more layers. Then, a fine electrode 3 of a sharp tip is made proximate to a surface of the outermost layer 1, a voltage is applied using the fine electrode 3 as a negative electrode and the outermost layer 1 as a positive electrode and a pattern of a fine anodic oxide film 4 is formed in an outermost layer surface. Furthermore, the resist outermost layer 1 is etched by a proper method using the generated anodic oxide film 4 as a mask for fine processing of the outermost layer 1. A substrate or a resist second layer is finely processed using a fine pattern acquired in this way as a mask. |
