发明名称 PRODUCTION OF FERROELECTRIC THIN FILM
摘要 PURPOSE:To form ferroelectric thin film high in polarizability in which polarization is uniform in one direction, at the time of forming a ferroelectric thin film on a substrate, by impressing voltage on the space between a target and the substrate in the process of the film forming and/or after the film forming. CONSTITUTION:At the time of irradiating a target with an ultraviolet laser 3 to form a film on a substrate 4 (such as a single crystal substrate) in a vacuum chamber, a ring electrode 10 is used and an electric field gradient is given in the vertical direction of the substrate 4. Furthermore, a voltage impressed on the ring electrode 10 is different according to the distance between the substrate 4 and the electrode 10, the voltage is preferably regulated to the range of about 1000 to 3000V/cm. In this way, the ferroelectric thin film of single polarization is formed on the substrate 4.
申请公布号 JPH0734223(A) 申请公布日期 1995.02.03
申请号 JP19930197843 申请日期 1993.07.14
申请人 KAWASAKI HEAVY IND LTD 发明人 TABATA HITOSHI;MURATA OSAMU
分类号 C23C14/08;C30B23/08;C30B25/02;C30B25/06;H01L41/22;H01L41/257 主分类号 C23C14/08
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