| 摘要 |
<p>A high-performance thin film semiconductor device and a simple method for manufacturing the device. After depositing a silicon film at a rate of deposition of 6 Å/min at 580PC, the film is thermally oxidized. As a result, a high-performance thin film semiconductor device can be easily and stably manufactured. A thin film semiconductor device which can be driven at a high speed under a low voltage is also provided. By using a short-channel TFT circuit having an LDD structure, the device can be operated at a high-speed under a low voltage. In addition, the power consumption of the device can be suppressed and the breakdown voltage of the device can be increased. By optimizing the highest impurity concentration LDD part and the highest impurity concentration, LDD length, and channel length of the source-drain part, the operating speed of the device can be further increased. When a display device or display system uses such a thin film semiconductor device, the driving signal can be at a TTL level or lower.</p> |
