FORMING METHOD OF METAL WIRING FILM

摘要

The method includes the steps of forming on insulating layer (1) on the substrate (10), forming a contact hole (CH) into the layer (1), forming a 1st amorphous Si layer (2) of 500-2000 angstrom thickness at 550 deg.C by using a LPCVD process, implanting P ions of 5×1015 - 5×1016 ion/cm2 at 30-60 ke and P ions of 1×1015 - 5×1015 ion/cm2 at 80-150 keV into the layer (2), forming a 2nd amorphous Si layer (3) on the layer (2) to fill the hole (CH) with the layer (3), implanting impurities into the layer (3), etching-back the layers (2,3) to form an amorphous Si plug in the hole (CH), and forming a metallic wiring film (M) thereon, thereby using the polysilicon plug technology to improve the covering power of metal wiring.