| 摘要 |
An MOS-driven diode (1) is disclosed which comprises a p<+>-type (5) layer and an n<->-type layer (4) and an n<+>-type layer (9). Between the n<->-type layer (4) and the n<+>-type layer (9), a p-type region (8) is arranged which completely surrounds the n<+>-type layer (9). The p-type region (8) is to be bridged by applying a voltage to an insulated gate electrode arranged above it. As a result, the diode changes from the normal blocking state to the conducting state. The diode can be made to have a high blocking capability by means of an edge termination at the cathode end. An edge termination (15) at the anode end provides a reverse blocking diode and anode-end short circuits (14) provide a reverse-conducting diode. <IMAGE> |
