| 摘要 |
<p>PURPOSE:To provide the process for production of the liquid crystal display device with thin-film transistors(TFTs) constituted to decrease the number of stages and production equipment. CONSTITUTION:After a first semiconductor thin film is formed on a transparent substrate 20, an oxide film 21a is formed on its surface and a second semiconductor 21b is formed on the surface of this oxide film. The second semiconductor film 21b is removed exclusive of the parts to constitute the gates of the TFTs and the oxide film 21a is selectively removed. The first semiconductor thin film of the parts corresponding to the parts where the oxide film is removed is made conductive by diffusion, etc., by which source electrode wirings 22 and pixel electrodes 23 connected to source and drain regions are simultaneously formed. Gate electrode wirings 25 connected to the gate regions formed by the second semiconductor film are thereafter formed by insulating these wirings from the source electrode wirings and the pixel electrodes.</p> |
