Dynamic random access memory device with low-power consumption column selector.

摘要

A column selector (34) of a dynamic random access memory device is implemented by a plurality of switching circuits (341-34m) for transferring a potential difference from a sense amplifier (SA1-SAm) to a shared data line pair (DL1/DL2), and one of the switching circuits selectively discharge the data lines (DL1/DL2) of the pair to a ground voltage line (GND) for transferring the potential difference to the shared data line pair, wherein a potential control circuit (37) is coupled between the switching circuits and the ground voltage line for decreasing the current (I) flowing from the data line to the ground voltage line after production of an output data signal (Dout), thereby decreasing the current consumption. <IMAGE>