| 摘要 |
<p>In a semiconductor inner lead bonding process, a connection component having leads is disposed on a chip surface so that leads lie above contacts (54). A bond region (62) of each lead is forced downwardly by a tool (60) into engagement with a contact (54) on the chip while a first or proximal end (38) of the lead remains attached to a dielectric support structure. The lead is deformed into an S-shaped configuration by moving the bonding tool (60) horizontally towards the proximal or first end (38) of the lead, thereby forcing the bonding region (62) towards the first end (38) and bending or buckling the lead. Alternatively, the lead is bent downwardly by a tool and the tool may then be disengaged from the lead, shifted away from the proximal end (38) of the lead and again advanced downwardly to secure the lead to the chip contact (54).</p> |
