| 摘要 |
PURPOSE:To improve the electrode structure of a blue LED chip, to increase a light-emitting luminous intensity, to install an exclusively used pedestal which is matched to the LED chip and to mount the chip easily. CONSTITUTION:A p-n epitaxial layer which is composed of a GaN layer is formed on a sapphire substrate 2. A hole 7 is made in the center of its surface, an n-bype GaN layer 3 is exposed in a circular shape, and a p-type GaN layer 4 is left in its periphery. A circular n-side electrode 6 is formed on the circular n-type layer 3 which is exposed inside the hole 7, and a p-side electrode 5 which surrounds the n-side electrode 6 is formed on the left p-type layer 4, and an LED chip 1 is constituted. The LED chip 1 is mounted on an exclusively used pedestal which corresponds is to the chip 1 in a recessed part receiving the chip and on which two electrodes have been formed. |
