MANUFACTURE OF SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PURPOSE:To suppress thermal damages on the surface of a substrate by covering the surface of a compound semiconductor substrate of a first conductivity type with a same material compound semiconductor of a second conductivity type and converting the conductivity type of the shallow area from the surface of the substrate of the first conductivity type into the second conductivity type at a high temperature. CONSTITUTION:A DH (double hetero) substrate is formed on an N-type InP substrate 21 by first epitaxial growth and the DH substrate 43 provided with a mesa stripe is placed on a substrate holder 42. The DH substrate 43 is covered with a P-type InP crystal substrate 44 which contains Zn as impurity and a carbon cover 45 is placed. Then, the substrate is placed in H2 atmosphere in a liquid phase epitaxially growing furnace at 630 deg.C for 20 minutes. The temperature is lowered to 615 deg.C by 0.5 deg.C per minute, and the growth of P-type InP block layer is started by second epitaxial growing. Therefore, a P-type converted layer 27 is stably formed with excellent reproducibility in a shallow area from the surface of the N-type InP clad layer 22. Thus, operation of the element is stabilized and the reliability is improved.