| 摘要 |
PURPOSE:To obtain excellent ohmic contact in a P-type wide gap II-VI compound semiconductor, by mixing a lot of nitrogen atoms in a contact layer whose main component is P-type II-VI wide gap compound semiconductor. CONSTITUTION:On compound semiconductor substrates 21-24 whose surface is at least composed of P-type II-VI wide gap compound semiconductor 24 such as ZnSe, ZnSSe, ZnS, ZnMgSe and ZnMgSSe, a contact layer 25 whose main component is P-type II-VI wide gap compound semiconductor is formed in order to obtain ohmic contact, and an ohmic electrode 26 is formed via the contact layer 25. In the above compound semiconductor, a lot of nitrogen atoms are mixed in the contact layer 25. For example, nitrogen atoms of 1X10<20>cm<-3> or more are mixed in the contact layer 25, and the thickness of the contact layer 25 is set to be 10nm or smaller. |
