| 摘要 |
PURPOSE:To manufacture the title SOI substrate having excellent evenness in film thickness of a silicon layer. CONSTITUTION:After the formation of an insulating film 12 on the first substrate 11 in the first step, insulating film patterns 13 are formed by patterning in the insulating film 12. Successively, after the film formation of a base material layer 14 covering the insulating patterns 13 in the second step, the surface of the base material layer 14 is formed into flat shate. Next, after sticking the second substrate 15 on the flat surface 14a of the base material layer 14 in the third step, the first substrate 11 is removed to expose the insulating film patterns 13 and the base material layer 14. Later, a silicon layer 17 is formed on the insulating patterns 13 side so as to form the title SOI substrate 1. |
