| 摘要 |
<p>PURPOSE:To simultaneously form a plurality of cold cathodes on a substrate with a large surface area by forming projecting parts united with the substrate by removing the parts which are under photoresist and coating the projecting parts with a metal film to give project-type cathodes. CONSTITUTION:A photoresist layer 42 is formed on a silicon substrate 1, an impurity is diffused in the substrate 1 from the surface layer, the surface layer is anodized to form an insulating film (oxide film) 2, and the oxide film 2 is coated with a metal layer 47. The photoresist 42 is removed, etching is carried out using the metal layer 47 as a mask so as to remove the parts of the oxide film 2 under the photoresist 42 and expose not oxidized parts of the substrate and give projecting parts 1a united with the substrate 1. The projecting parts 1a is coated with a metal film 3, which may be the same as the metal layer 17, to give project-type cathodes 10. In this way, project-type cathodes 10 are formed at desired positions and a plurality of cold cathodes are formed simultaneously on a substrate with large surface area.</p> |
