| 摘要 |
PURPOSE:To provide a semiconductor device wherein a field effect transistor operates with high reliability, by improving heat dissipation efficiency. CONSTITUTION:In a semiconductor chip 31, a field effect transistor having a source earthing circuit is formed in the surface side region of a semiconductor substarate, and a gate electrode 32, a source electrode 23 and a drain electrode 34 are exposed on the surface side. A metal film 35 is formed on the surface from the upper part of the source electrode 33 to the rear along the side surface of the semiconductor chip 31. The surface side of the semiconductor chip 31 is bonded to an insulator board 1 by using conductive adhesive agent 37, in the manner in which the gate electrode 32, the source electrode 33, and the drain electrode 34 are electrically connected with an input wiring pattern, a metal wiring pattern, and an output wiring pattern, respectively. A heat sink 36 is bonded on the metal film 35 by using adhesive agent having an excellent thermal conductivity. |
