FORMATION OF ELECTRODE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE:To form an electrode layer on a semiconductor device through the use of lift-off method by forming a laminate resist layer having a reverse tapered opening through side etching and using the laminate resist layer as a mask. CONSTITUTION:A positive lower resist layer 12 is formed on a semiconductor device 11 and rendered soluble through entire surface exposure. A positive upper resist layer 13 is then laminated thereon and exposed through a mask 14 thus rendering a region 13 (a) soluble. It is then developed to spread dissolution from the region 13 (a) to the bottom part of the upper resist layer 13. Side etching also proceeds at the lower resist layer 12 in parallel with the downward dissolution thus forming a laminate resist layer having a reverse tapered opening. An electrode layer 15 (a) is then deposited in the opening using the laminate resist layer as a mask before the lower resist layer 12 and the upper resist layer 13 (b) are dissolved to be removed. Consequently, an electrode layer 15 (a) can be formed on the surface of the semiconductor device 11 through the use of lift-off method.