| 摘要 |
PURPOSE:To operate a field effect transistor with high reliability by reducing parasitic inductance and improving humidity resistance and heat dissipation efficiency. CONSTITUTION:In a semiconductor chip 31, a field effect transistor is formed in the surface side region of a semiconductor substarate, and a gate electrode, 32, a source electrode 23 and a drain electrode 34 are exposed on the surface side. The source electrode is formed in a loop type on the surface periphery of the semiconductor chip. The gate electrode and the drain electrode are formed inside the source electrode. A metal film 35 is formed on the surface from the upper part of the source electrode to the rear along the chip side surface. The semiconductor chip is bonded to an insulator board 1 by using conductive adhesive agent 37, in the manner in which the gate electrode, the source electrode, and the drain electrode are electrically connected with an input wiring pattern 44, a metal wiring pattern 45, and an output wiring pattern, respectively. A heat sink 36 is bonded on the metal film. |
