MANUFACTURE OF BONDED WAFER

摘要

PURPOSE:To provide a bonded wafer manufacturing method with which the redistribution of impurities can be suppressed and wafers can be bonded with sufficient strength. CONSTITUTION:An oxide film is formed on the surface of a thin wafer (bonded wafer) of two single crystal silicon wafers having different thickness of 50mum or more, the thin wafer is junctioned to the other thick wafer (base wafer) through the intermediary of the oxide film, a heat treatment is conducted at least twice on the two joined wafers at the temperature of 900 deg.C or lower for 5 to 120 minutes.