| 摘要 |
The invention relates to a memory cell for a static associative memory comprising two arrays of transistors, a first array having a data storage function and a second array having a comparison function between the stored data item and a data item applied to the input of the cell, the comparison result being obtained on a selection line S, in which the second array (T1,T2,T3,T4) of transistors is partly formed by the transistors of the first array (T3,T4,T7,T8,T5,T6). The structure of the cell thus has reduced overall dimensions compared with known structures.
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