发明名称 |
HALFTONE PHASE-SHIFT PHOTOMASK AND BLANK FOR THE SAME |
摘要 |
<p>PURPOSE:To obtain a halftone phase-shift photomask of simple structure by which a plate making process is shortened, cost is reduced and yield is increased and with the existing production line used as such and to obtain a blank for the photomask. CONSTITUTION:A halftone phase-shift layer 806 on a transparent substrate 803 contains at least one layer consisting essentially of a chromium compd. to constitute a halftone phase-shift photomask 809. In the photomask, the compositional ratio of the chromium atom to oxygen atom in the layer consisting essentially of a chromium compd. is found to be 100:(100 to 300) by X-ray photoelectron spectroscopy for chemical analysis.</p> |
申请公布号 |
JPH0728224(A) |
申请公布日期 |
1995.01.31 |
申请号 |
JP19930173042 |
申请日期 |
1993.07.13 |
申请人 |
DAINIPPON PRINTING CO LTD;MITSUBISHI ELECTRIC CORP |
发明人 |
HASHIMOTO KEIJI;FUJIKAWA JUNJI;MORI HIROSHI;TAKAHASHI MASAYASU;MIYASHITA HIROYUKI;IIMURA YUKIO |
分类号 |
G03F1/32;G03F1/68;G03F1/80;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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