发明名称 HALFTONE PHASE-SHIFT PHOTOMASK AND BLANK FOR THE SAME
摘要 <p>PURPOSE:To obtain a halftone phase-shift photomask of simple structure by which a plate making process is shortened, cost is reduced and yield is increased and with the existing production line used as such and to obtain a blank for the photomask. CONSTITUTION:A halftone phase-shift layer 806 on a transparent substrate 803 contains at least one layer consisting essentially of a chromium compd. to constitute a halftone phase-shift photomask 809. In the photomask, the compositional ratio of the chromium atom to oxygen atom in the layer consisting essentially of a chromium compd. is found to be 100:(100 to 300) by X-ray photoelectron spectroscopy for chemical analysis.</p>
申请公布号 JPH0728224(A) 申请公布日期 1995.01.31
申请号 JP19930173042 申请日期 1993.07.13
申请人 DAINIPPON PRINTING CO LTD;MITSUBISHI ELECTRIC CORP 发明人 HASHIMOTO KEIJI;FUJIKAWA JUNJI;MORI HIROSHI;TAKAHASHI MASAYASU;MIYASHITA HIROYUKI;IIMURA YUKIO
分类号 G03F1/32;G03F1/68;G03F1/80;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/32
代理机构 代理人
主权项
地址