发明名称 |
Silicon containing negative resist for DUV, I-line or E-beam lithography comprising an aromatic azide side group in the polysilsesquioxane polymer |
摘要 |
A silicon-containing negative photoresist is used as the top imaging layer in a bilayer substrate patterning scheme. The photoresist is a single component resist in which the photoactive element is chemically bonded to the base polymer. In particular, an aromatic azide containing group is covalently bonded to the phenolic group of the poly(4-hydroxybenzyl)silsesquioxane (PHBS) via an esterification reaction. The new photoresist is easily synthesized and has the advantageous properties of aqueous base developability, excellent O2 RIE resistance, and high sensitivity to DUV, I-line and E-beam exposures.
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申请公布号 |
US5385804(A) |
申请公布日期 |
1995.01.31 |
申请号 |
US19920932830 |
申请日期 |
1992.08.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JAGANNATHAN, PREMLATHA;SACHDEV, HARBANS S.;SOORIYAKUMARAN, RATNAM |
分类号 |
G03F7/004;C08G77/388;C08G77/392;G03F7/012;G03F7/038;G03F7/075;G03F7/26;H01L21/027;H01L21/30;(IPC1-7):G03F7/012 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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